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 Fast Recovery Epitaxial Diode (FRED)
DSEI 60 IFAVM = 60 A
VRRM = 1000 V = 35 ns trr
C
VRSM V 1000
VRRM V 1000
Type
A
TO-247 AD
DSEI 60-10A
C A C
Symbol I FRMS I FAVM I FRM I FSM
Test Conditions TVJ = TVJM TC = 60C; rectangular, d = 0.5 tP < 10 s; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 100 60 800 500 540 450 480 1250 1200 1000 950 -40...+150 150 -40...+150 A A A A A A A A2s A2s As A2s C C C W Nm/lb.in. Nm/lb.in. g
2
A = Anode, C = Cathode
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine i2 dt TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Features
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TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque with screw M3 Mounting torque with screw M3.5
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International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meet UL 94V-0
189 0.45/4 0.55/5 6
Applications
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Symbol
Test Conditions
Characteristic Values typ. max. 3 0.5 14 1.8 2.3 1.43 6.1 0.66 0.2 35 mA mA mA V V V m K/W K/W K/W ns A
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IR
TVJ = 25C TVJ = 25C TVJ = 125C IF = 60 A;
VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ = 150C TVJ = 25C
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VF VT0 rT RthJC RthCK RthJA t rr I RM
Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
For power-loss calculations only TVJ = TVJM
Advantages
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IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C VR = 540 V; IF = 60 A; -diF/dt = 480 A/s L 0.05 H; TVJ = 100C
35 32
50 36
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High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling
IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to DIN/IEC 747 IXYS reserves the right to change limits, test conditions and dimensions
96504A
(c) 1997 IXYS All rights reserved
27
DSEI 60, 1000 V
Fig. 1 Forward current versus voltage drop.
Fig. 2 Recovery charge versus -diF /dt.
Fig. 3 Peak reverse current versus -diF/dt.
Fig. 4 Dynamic parameters versus junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage versus -diF/dt.
Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
Dimensions
Fig. 7 Transient thermal impedance junction to case.
28
(c) 1997 IXYS All rights reserved


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